HF10N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.
| Part No. | HF10N65 | |
| VDSS(V) | 650 | |
| ID(A) | 10 | |
| RDS(ON) (Ω)@VGS = 10V | Typ. | 0.55 |
| Max. | 0.75 | |
| VGS(th) (V) | Min. | 2 |
| Typ. | 3 | |
| Max. | 4 | |
| Package | TO220 TO220F |
